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SiC CMOS Design-Contest
CMOS Technology Based Sensing and Signal Processing Operable up to 600 °C
The Fraunhofer IISB SiC CMOS technology, available via EUROPRACTICE, is at the forefront of innovation, offering unique performance in extremely harsh environments and enabling high temperature operation up to 600°C. Join the Fraunhofer IISB design contest to push the limits and make your mark in CMOS design using our advanced SiC CMOS technology for high temperature applications.
Participate in any of these three categories
Operational Amplifier
Multiplexer
Pulse Width Modulator
Timeline for the Design Contest
Join Fraunhofer IISB in the Pursuit of Scientific Excellence
Collaborate with Fraunhofer IISB to embark on a transformative journey at the intersection of science and technology.
Use the contact form on the right to contact Mathias Rommel, Group Manager for SiC CMOS
Circuit Design and Characterization, and together, let us push the boundaries of scientific exploration.
About us
The 4H-SiC High Temperature Sensors & Electronics is a development of the Fraunhofer IISB. Through a cooperation partnership with LZE GmbH, it can be made available to interested customers via the LZE GmbH.
The Fraunhofer Institute for Integrated Systems and Device Technology (IISB) has decades of experience in applied research in the fields of semiconductors and power electronics. Over 200 employees develop innovative solutions for a wide range of applications.
LZE GmbH is the interface that turns inventions into innovations. We offer companies access to new developments and products as well as all services along the market launch. At the same time, we commercialise leading edge technologies from the Fraunhofer Institutes IIS and IISB and the Friedrich-Alexander University.