4H-SiC High Temperature
Sensors & Electronics

A technology provided by

CMOS Technology Based Sensing and Signal Processing Operable up to 600 °C

LZE.Innovation presents the forefront of scientific exploration at Fraunhofer IISB, where relentless pursuit of innovation drives to redefine the boundaries of possibility in semiconductor technology. Dive into the intricate world of 4H-SiC High Temperature Sensors & Electronics, where every advancement opens new avenues for scientific discovery and technological breakthroughs.

Fraunhofer IISB is the only provider for high temperature CMOS technology in Europe!

Technology made for harsh environments

  • 4H-SiC: THE material of choice to exceed Si limits

  • 4H-SiC enabling:

  • High temperature up to 600 °C

  • Radiation hardness
  • Corrosion resistant

Technology made for harsh environments

  • 4H-SiC: THE material of choice to exceed Si limits

  • 4H-SiC enabling:

  • High temperature up to 600 °C

  • Radiation hardness
  • Corrosion resistant

CMOS-based logic and analogue circuitry

  • Lateral 2 µm prototype / early access technology

  • PDK featuring MOSFET compact models with models for passives and parasitics coming soon

  • Two metallization layers and polysilicon layer as gate electrode

CMOS-based logic and analogue circuitry

  • Lateral 2 µm prototype / early access technology

  • PDK featuring MOSFET compact models with models for passives and parasitics coming soon

  • Two metallization layers and polysilicon layer as gate electrode

Integration of sensors and power devices

  • Smart integration for signal processing, gate drivers and more

  • Sensing solutions for temperature, UV and magnetic fields

  • Pressure sensing in development

  • Lateral power MOSFETs available
  • Options for vertical device integration

Integration of sensors and power devices

  • Smart integration for signal processing, gate drivers and more

  • Sensing solutions for temperature, UV and magnetic fields

  • Pressure sensing in development

  • Lateral power MOSFETs available
  • Options for vertical device integration

Easy access with customizable process solutions

  • Bilateral collaboration for tailored solutions from research to full wafer processing as service

  • Easy access through multi-project wafer (MPW) via EUROPRACTICE

Easy access with customizable process solutions

  • Bilateral collaboration for tailored solutions from research to full wafer processing as service

  • Easy access through multi-project wafer (MPW) via EUROPRACTICE

The entire value chain in SiC

Join Fraunhofer IISB in the Pursuit of Scientific Excellence

Collaborate with Fraunhofer IISB to embark on a transformative journey at the intersection of science and technology.
Use the contact form on the right to contact Mathias Rommel, Group Manager for SiC CMOS
Circuit Design and Characterization, and together, let us push the boundaries of scientific exploration.

About us

The 4H-SiC High Temperature Sensors & Electronics is a development of the Fraunhofer IISB. Through a cooperation partnership with LZE GmbH, it can be made available to interested customers via the LZE GmbH.

The Fraunhofer Institute for Integrated Systems and Device Technology (IISB) has decades of experience in applied research in the fields of semiconductors and power electronics. Over 200 employees develop innovative solutions for a wide range of applications.

LZE GmbH is the interface that turns inventions into innovations. We offer companies access to new developments and products as well as all services along the market launch. At the same time, we commercialise leading edge technologies from the Fraunhofer Institutes IIS and IISB and the Friedrich-Alexander University.